@article{WOS:000611066000181,
 abstract = {Achieving a high-quality metal contact on two-dimensional (2D)
semiconductors still remains a major challenge due to the strong Fermi
level pinning and the absence of an effective doping method. Here, we
demonstrate high performance ``all-PtSe2″ field-effect transistors
(FETs) completely free from those issues, enabled by the vertical
integration of a metallic thick PtSe2 source/drain onto the
semiconducting ultrathin PtSe2 channel. Owing to its inherent
thickness-dependent semiconductor-to-metal phase transition, the
transferred metallic PtSe2 transforms the underlying semiconducting
PtSe2 into metal at the junction. Therefore, a fully metallized
source/drain and semiconducting channel could be realized within the
same PtSe2 platform. The ultrathin PtSe2 FETs with PtSe2 vdW contact
exhibits excellent gate tunability, superior mobility, and high ON
current accompanied by one order lower contact resistance compared to
conventional Ti/Au contact FETs. Our work provides a new device paradigm
with a low resistance PtSe2 vdW contact which can overcome a fundamental
bottleneck in 2D nanoelectronics.},
 author = {Das, Tanmoy and Yang, Eunyeong and Seo, Jae Eun and Kim, Jeong Hyeon and
Park, Eunpyo and Kim, Minkyung and Seo, Dongwook and Kwak, Joon Young
and Chang, Jiwon},
 doi = {10.1021/acsami.0c17810},
 eissn = {1944-8252},
 issn = {1944-8244},
 journal = {ACS APPLIED MATERIALS & INTERFACES},
 month = {JAN 13},
 number = {1},
 orcid-numbers = {Chang, Jiwon/0000-0003-0781-2522
DAS, TANMOY/0000-0002-7475-7001},
 pages = {1861-1871},
 researcherid-numbers = {Chang, Jiwon/AAN-8970-2021
},
 title = {Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase
Transition},
 unique-id = {WOS:000611066000181},
 volume = {13},
 year = {2021}
}