@article{ISI:000460410300015,
 abstract = {Research efforts in large area graphene synthesis have been focused on
increasing grain size. Here, it is shown that, beyond 1 mu m grain size,
grain boundary engineering determines the electronic properties of the
monolayer. It is established by chemical vapor deposition experiments
and first-principle calculations that there is a thermodynamic
correlation between the vapor phase chemistry and carbon potential at
grain boundaries and triple junctions. As a result, boundary formation
can be controlled, and well-formed boundaries can be intentionally made
defective, reversibly. In 100 mu m long channels this aspect is
demonstrated by reversibly changing room temperature electronic
mobilities from 1000 to 20,000 cm(2) V-1 s(-1). Water permeation
experiments show that changes are localized to grain boundaries.
Electron microscopy is further used to correlate the global vapor phase
conditions and the boundary defect types. Such thermodynamic control is
essential to enable consistent growth and control of two-dimensional
layer properties over large areas.},
 article-number = {1090},
 author = {Balasubramanian, Krishna and Biswas, Tathagatha and Ghosh, Priyadarshini
and Suran, Swathi and Mishra, Abhishek and Mishra, Rohan and Sachan,
Ritesh and Jain, Manish and Varma, Manoj and Pratap, Rudra and Raghavan,
Srinivasan},
 doi = {10.1038/s41467-019-09000-8},
 issn = {2041-1723},
 journal = {NATURE COMMUNICATIONS},
 month = {MAR 6},
 orcid-numbers = {Jain, Manish/0000-0001-9329-6434
Mishra, Rohan/0000-0003-1261-0087
Sachan, Ritesh/0000-0002-3604-1467},
 researcherid-numbers = {Jain, Manish/A-8303-2010
Mishra, Rohan/J-5727-2019
},
 times-cited = {9},
 title = {Reversible defect engineering in graphene grain boundaries},
 unique-id = {ISI:000460410300015},
 volume = {10},
 year = {2019}
}