@article{ISI:000454637100022,
 abstract = {Ultraflatbands in twisted bilayers of two-dimensional materials have the
potential to host strong correlations, including the Mott-insulating
phase at half-filling of the band. Using first-principles density
functional theory calculations, we show the emergence of ultraflatbands
at the valence band edge in twisted bilayer MoS2, a prototypical
transition metal dichalcogenide. The computed band widths, 5 and 23 meV
for 56.5 degrees and 3.5 degrees twist angles, respectively, are
comparable to that of twisted bilayer graphene near ``magic″ angles.
Large structural transformations in the moire patterns lead to formation
of shear solitons at stacking boundaries and strongly influence the
electronic structure. We extend our analysis for twisted bilayer MoS2 to
show that flatbands can occur at the valence band edge of twisted
bilayer WS2, MoSe2, and WSe2 as well.},
 article-number = {266401},
 author = {Naik, Mit H. and Jain, Manish},
 doi = {10.1103/PhysRevLett.121.266401},
 eissn = {1079-7114},
 issn = {0031-9007},
 journal = {PHYSICAL REVIEW LETTERS},
 month = {DEC 28},
 number = {26},
 orcid-numbers = {Jain, Manish/0000-0001-9329-6434},
 researcherid-numbers = {Jain, Manish/A-8303-2010},
 times-cited = {38},
 title = {Ultraflatbands and Shear Solitons in Moire Patterns of Twisted Bilayer
Transition Metal Dichalcogenides},
 unique-id = {ISI:000454637100022},
 volume = {121},
 year = {2018}
}