@article{ISI:000367280100107,
 abstract = {Slow intrinsic fluctuations of resistance, also known as the flicker
noise or 1/f-noise, in the surface transport of strong topological
insulators (TIs) is a poorly understood phenomenon. Here, we have
systematically explored the 1/f-noise in field-effect transistors (FET)
of mechanically exfoliated Bi1.6Sb0.4Te2Se TI films when transport
occurs predominantly via the surface states. We find that the slow
kinetics of the charge disorder within the bulk of the TI induces
mobility fluctuations at the surface, providing a new source of
intrinsic 1/f-noise that is unique to bulk TI systems. At small channel
thickness, the noise magnitude can be extremely small, corresponding to
the phenomenological Hooge parameter gamma(H) as low as approximate to
10(-4), but it increases rapidly when channel thickness exceeds similar
to 1 mu m. From the temperature (T)-dependence of noise, which displayed
sharp peaks at characteristic values of T, we identified
generation-recombination processes from interband transitions within the
TI bulk as the dominant source of the mobility fluctuations in surface
transport. Our experiment not only establishes an intrinsic microscopic
origin of noise in TI surface channels, but also reveals a unique
spectroscopic information on the impurity bands that can be useful in
bulk TI systems in general.},
 author = {Bhattacharyya, Semonti and Banerjee, Mitali and Nhalil, Hariharan and
Islam, Saurav and Dasgupta, Chandan and Elizabeth, Suja and Ghosh,
Arindam},
 doi = {10.1021/acsnano.5b06163},
 eissn = {1936-086X},
 issn = {1936-0851},
 journal = {ACS NANO},
 month = {DEC},
 number = {12},
 orcid-numbers = {Islam, Saurav/0000-0001-8524-4992
Nhalil, Hariharan/0000-0003-4970-7106
Bhattacharyya, Semonti/0000-0003-3387-0531
ISLAM, SAURAV/0000-0001-8524-4992
Dasgupta, Chandan/0000-0002-0302-1881},
 pages = {12529-12536},
 researcherid-numbers = {Islam, Saurav/A-2313-2019
Nhalil, Hariharan/N-6780-2016
Bhattacharyya, Semonti/I-9552-2019
ISLAM, SAURAV/AAR-4258-2020
},
 times-cited = {19},
 title = {Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological
Insulators},
 unique-id = {ISI:000367280100107},
 volume = {9},
 year = {2015}
}