@article{ISI:000342568000018,
 abstract = {We report measurement of low frequency 1/f noise in molybdenum
di-sulphide (MOS2) field-effect transistors in multiple device
configurations including MoS2 on silicon dioxide as well as
MOS2-hexagonal boron nitride (hBN) heterostructures. All as-fabricated
devices show similar magnitude of noise with number fluctuation as the
dominant mechanism at high temperatures and density, although the
calculated density of traps is two orders of magnitude higher than that
at the SiO2 interface. Measurements on the heterostructure devices with
vacuum annealing and dual gated configuration reveals that along with
the channel, metal-MoS2 contacts also play a significant role in
determining noise magnitude in these devices. (C) 2014 Author(s). All
article content, except where otherwise noted, is licensed under a
Creative Commons Attribution 3.0 Unported License.},
 article-number = {092515},
 author = {Ghatak, Subhamoy and Mukherjee, Sumanta and Jain, Manish and Sarma, D.
D. and Ghosh, Arindam},
 doi = {10.1063/1.4895955},
 issn = {2166-532X},
 journal = {APL MATERIALS},
 month = {SEP},
 number = {9},
 orcid-numbers = {Jain, Manish/0000-0001-9329-6434},
 researcherid-numbers = {Jain, Manish/A-8303-2010},
 times-cited = {41},
 title = {Microscopic origin of low frequency noise in MoS2 field-effect
transistors},
 unique-id = {ISI:000342568000018},
 volume = {2},
 year = {2014}
}