@article{ISI:000287367000003,
 abstract = {We report experimental observations of a new mechanism of charge
transport in two-dimensional electron systems (2DESs) in the presence of
strong Coulomb interaction and disorder. We show that at low enough
temperature the conductivity tends to zero at a nonzero carrier density,
which represents the point of essential singularity in a
Berezinskii-Kosterlitz-Thouless-like transition. Our experiments with
many 2DESs in GaAs/AlGaAs heterostructures suggest that the charge
transport at low carrier densities is due to the melting of an
underlying ordered ground state through proliferation of topological
defects. Independent measurement of low-frequency conductivity noise
supports this scenario.},
 article-number = {085302},
 author = {Koushik, R. and Baenninger, Matthias and Narayan, Vijay and Mukerjee,
Subroto and Pepper, Michael and Farrer, Ian and Ritchie, David A. and
Ghosh, Arindam},
 doi = {10.1103/PhysRevB.83.085302},
 issn = {1098-0121},
 journal = {PHYSICAL REVIEW B},
 month = {FEB 14},
 number = {8},
 orcid-numbers = {Farrer, Ian/0000-0002-3033-4306
Ritchie, David A/0000-0002-9844-8350
},
 researcherid-numbers = {Farrer, Ian/A-7671-2009
Ritchie, David A/K-2206-2014
Ghosh, Arindam/G-7044-2011},
 times-cited = {11},
 title = {Evidence of gate-tunable topological excitations in two-dimensional
electron systems},
 unique-id = {ISI:000287367000003},
 volume = {83},
 year = {2011}
}