@article{ISI:000286763200002,
 abstract = {We elucidate the relationship between effective mass and carrier
concentration in an oxide semiconductor controlled by a double-doping
mechanism. In this model oxide system, Sr1-xLaxTiO3-delta, we can tune
the effective mass ranging from 6 to 20m(e) as a function of filling
(carrier concentration) and the scattering mechanism, which are
dependent on the chosen lanthanum-and oxygen-vacancy concentrations. The
effective mass values were calculated from the Boltzmann transport
equation using the measured transport properties of thin films of
Sr1-xLaxTiO3-delta. We show that the effective mass decreases with
carrier concentration in this large-band-gap, low-mobility oxide, and
this behavior is contrary to the traditional high-mobility,
small-effective-mass semiconductors.},
 article-number = {035101},
 author = {Ravichandran, J. and Siemons, W. and Scullin, M. L. and Mukerjee, S. and
Huijben, M. and Moore, J. E. and Majumdar, A. and Ramesh, R.},
 doi = {10.1103/PhysRevB.83.035101},
 issn = {1098-0121},
 journal = {PHYSICAL REVIEW B},
 month = {JAN 4},
 number = {3},
 orcid-numbers = {Ravichandran, Jayakanth/0000-0001-5030-9143
Moore, Joel/0000-0002-4294-5761
Ravichandran, Jayakanth/0000-0001-5030-9143
Huijben, Mark/0000-0001-8175-6958},
 researcherid-numbers = {Siemons, Wolter/B-3808-2011
Ravichandran, Jayakanth/N-4593-2019
Moore, Joel/O-4959-2016
Ravichandran, Jayakanth/H-6329-2011
Huijben, Mark/J-7630-2017},
 times-cited = {23},
 title = {Tuning the electronic effective mass in double-doped SrTiO3},
 unique-id = {ISI:000286763200002},
 volume = {83},
 year = {2011}
}