@article{ISI:000273204200013,
 abstract = {Boron- and nitrogen-doped graphenes are are prepared by the arc
discharge between carbon electrodes or by the transformation of
nanodiamond under appropriate atmospheres. Using a combination of
experiment and theories based on first principles, systematic changes in
the carrier-concentration and electronic structure of the doped
graphenes are demonstrated. Stiffening of the G-band mode and
intensification of the defect-related D-band in the Raman spectra are
also observed.},
 author = {Panchokarla, L. S. and Subrahmanyam, K. S. and Saha, S. K. and
Govindaraj, Achutharao and Krishnamurthy, H. R. and Waghmare, U. V. and
Rao, C. N. R.},
 doi = {10.1002/adma.200901285},
 eissn = {1521-4095},
 issn = {0935-9648},
 journal = {ADVANCED MATERIALS},
 month = {DEC 11},
 number = {46},
 orcid-numbers = {Li, jiayu/0000-0003-2639-213X
Panchakarla, Leela Srinivas/0000-0001-5829-3377
Saha, Srijan Kumar/0000-0002-5086-796X},
 pages = {4726+},
 researcherid-numbers = {Li, jiayu/H-3827-2014
Panchakarla, Leela Srinivas/D-2724-2015
Saha, Srijan Kumar/J-7552-2012},
 times-cited = {1240},
 title = {Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped
Graphene},
 unique-id = {ISI:000273204200013},
 volume = {21},
 year = {2009}
}