@article{ISI:000260574300039,
 abstract = {We use a quenching scheme to study the dynamics of a one-dimensional
anisotropic XY spin-1/2 chain in the presence of a transverse field
which alternates between the values h+delta and h-delta from site to
site. In this quenching scheme, the parameter denoting the anisotropy of
interaction (gamma) is linearly quenched from -infinity to +infinity as
gamma=t/tau, keeping the total strength of interaction J fixed. The
system traverses through a gapless phase when gamma is quenched along
the critical surface h(2)=delta(2)+J(2) in the parameter space spanned
by h, delta, and gamma. By mapping to an equivalent two-level
Landau-Zener problem, we show that the defect density in the final state
scales as 1/tau(1/3), a behavior that has not been observed in previous
studies of quenching through a gapless phase. We also generalize the
model incorporating additional alternations in the anisotropy or in the
strength of the interaction and derive an identical result under a
similar quenching. Based on the above results, we propose a general
scaling of the defect density with the quenching rate tau for quenching
along a gapless critical line.},
 article-number = {144301},
 author = {Divakaran, Uma and Dutta, Amit and Sen, Diptiman},
 doi = {10.1103/PhysRevB.78.144301},
 eissn = {2469-9969},
 issn = {2469-9950},
 journal = {PHYSICAL REVIEW B},
 month = {OCT},
 number = {14},
 times-cited = {58},
 title = {Quenching along a gapless line: A different exponent for defect density},
 unique-id = {ISI:000260574300039},
 volume = {78},
 year = {2008}
}