@article{ISI:000259406900112,
 abstract = {We present a microscopic model for a line junction formed by counter or
copropagating single mode quantum Hall edges corresponding to different
filling factors. The ends of the line junction can be described by two
possible current splitting matrices which are dictated by the conditions
of both lack of dissipation and the existence of a linear relation
between the bosonic fields. Tunneling between the two edges of the line
junction then leads to a microscopic understanding of a phenomenological
description of line junctions introduced sonic time ago. The effect of
density-density interactions between the two edges is considered, and
renormalization-group ideas are used to study how the tunneling
parameter changes with the length scale. This leads to a power-law
variation of the conductance of the line junction with the temperature.
Depending on the strength of the interactions the line junction can
exhibit two quite different behaviors. Our results can be tested in bent
quantum Hall systems fabricated recently.},
 article-number = {085430},
 author = {Sen, Diptiman and Agarwal, Amit},
 doi = {10.1103/PhysRevB.78.085430},
 eissn = {2469-9969},
 issn = {2469-9950},
 journal = {PHYSICAL REVIEW B},
 month = {AUG},
 number = {8},
 orcid-numbers = {Agarwal, Amit/0000-0001-6399-7264},
 researcherid-numbers = {Agarwal, Amit/G-8580-2011
},
 times-cited = {11},
 title = {Line junction in a quantum Hall system with two filling fractions},
 unique-id = {ISI:000259406900112},
 volume = {78},
 year = {2008}
}