@article{ISI:000254744300012,
 abstract = {The recent discovery of graphene(1-3) has led to many advances in
two-dimensional physics and devices(4,5). The graphene devices
fabricated so far have relied on SiO2 back gating(1-3). Electrochemical
top gating is widely used for polymer transistors(6,7), and has also
been successfully applied to carbon nanotubes(8,9). Here we demonstrate
a top-gated graphene transistor that is able to reach doping levels of
up to 5x10(13) cm(-2), which is much higher than those previously
reported. Such high doping levels are possible because the
nanometre-thick Debye layer(8,10) in the solid polymer electrolyte gate
provides a much higher gate capacitance than the commonly used SiO2 back
gate, which is usually about 300 nm thick(11). In situ Raman
measurements monitor the doping. The G peak stiffens and sharpens for
both electron and hole doping, but the 2D peak shows a different
response to holes and electrons. The ratio of the intensities of the G
and 2D peaks shows a strong dependence on doping, making it a sensitive
parameter to monitor the doping.},
 author = {Das, A. and Pisana, S. and Chakraborty, B. and Piscanec, S. and Saha, S.
K. and Waghmare, U. V. and Novoselov, K. S. and Krishnamurthy, H. R. and
Geim, A. K. and Ferrari, A. C. and Sood, A. K.},
 doi = {10.1038/nnano.2008.67},
 eissn = {1748-3395},
 issn = {1748-3387},
 journal = {NATURE NANOTECHNOLOGY},
 month = {APR},
 number = {4},
 orcid-numbers = {Geim, Andre K/0000-0003-2861-8331
Saha, Srijan Kumar/0000-0002-5086-796X
Novoselov, Kostya S/0000-0003-4972-5371
Pisana, Simone/0000-0002-9291-6061
hai yan, he/0000-0003-0366-6185},
 pages = {210-215},
 researcherid-numbers = {Geim, Andre K/J-7888-2012
Saha, Srijan Kumar/J-7552-2012
Novoselov, Kostya S/G-9581-2014
Pisana, Simone/E-1788-2011
},
 times-cited = {2396},
 title = {Monitoring dopants by Raman scattering in an electrochemically top-gated
graphene transistor},
 unique-id = {ISI:000254744300012},
 volume = {3},
 year = {2008}
}